GaN power device market seen reaching $2.67B by 2030

The Business Research Company says the global gallium nitride power device market will grow from $0.89 billion in 2025 to $2.67 billion by 2030, driven by EV adoption, fast charging and wider use of efficient power electronics. North America led the market in 2025, while Asia-Pacific is expected to grow fastest over the forecast period.

Why it matters: - Gallium nitride power devices are becoming a core technology for faster charging, higher power density and more efficient energy use. - The market’s projected rise to $2.67 billion by 2030 signals expanding demand across electric vehicles, telecom, consumer electronics and power conversion systems. - The shift could support smaller, lighter and more efficient systems in vehicles and other electronic products.

What happened: - The Business Research Company published a report on the global gallium nitride power device market, covering market size, trends and forecasts for 2026-2035. - The market is expected to grow from $0.89 billion in 2025 to $1.11 billion in 2026, a 25.0% CAGR. - The report projects the market will reach $2.67 billion by 2030, growing at a 24.6% CAGR. - North America held the largest market share in 2025. - Asia-Pacific is expected to be the fastest-growing region during the forecast period.

The details: - GaN power devices use gallium nitride to deliver higher power density, faster switching speeds and better energy efficiency than traditional silicon-based components. - The devices are designed to operate under high voltage, high frequency and elevated temperatures while reducing power loss. - The report cites demand from energy-efficient power electronics, high-performance semiconductor devices, advanced telecommunications infrastructure, consumer gadgets and renewable energy technology as drivers of the 2025-2026 expansion. - The forecast period is driven by ultra-fast charging, electrification in transportation, higher demand for high-power-density semiconductors, next-generation power conversion systems and investment in wide bandgap semiconductor manufacturing. - The report highlights growing use of wide bandgap semiconductor power devices, high-frequency and high-voltage power conversion solutions, compact GaN devices in advanced power electronics, fast-charging applications and more reliable power semiconductor components. - The market report covers Asia-Pacific, South East Asia, Western Europe, Eastern Europe, North America, South America, and the Middle East and Africa. - The 2026 report adds market attractiveness scoring, total addressable market analysis, company scoring matrix graphics and tables, Excel-based forecasting dashboards, market hotspots infographics, key technologies and future trend analysis, and updated graphics and tables. - The report offers a free sample and full version through the company’s sample request page and the full report page.

Between the lines: - The EV angle is central because faster charging and better efficiency are direct consumer benefits, not just technical upgrades. - The market outlook also reflects a broader move toward wide bandgap semiconductors as manufacturers look for better performance than silicon can provide. - The regional split suggests mature demand in North America and stronger growth potential in Asia-Pacific, where electronics and manufacturing scale can accelerate adoption.

What's next: - The market is likely to keep benefiting from EV growth and investment in high-efficiency power systems. - Wider adoption of ultra-fast charging and next-generation power conversion could push GaN devices deeper into automotive and industrial applications. - Manufacturers and investors will likely focus on scaling production of wide bandgap semiconductors to meet forecast demand.

The bottom line: - GaN power devices are moving from niche semiconductor products toward broader use in electrification and high-efficiency power electronics, with the market expected to nearly triple by 2030.